1 si apd s12023 series, etc. low bias operation, for 800 nm band www.hamamatsu.com structure / absolute maximum ratings type no. dimensional outline/window material* 1 package effective photosensitive area size* 2 absolute maximum ratings operating temperature topr storage temperature tstg soldering conditions (mm) (c) (c) s12023-02 (1)/k to-18 0.2 -20 to +85 -55 to +125 260 c or less, within 10 s s12023-05 (1)/k 0.5 s12051 (2)/l s12086 (3)/l s12023-10 (1)/k 1.0 s12023-10a * 3 (1)/k s3884 (4)/k to-5 1.5 s2384 (5)/k 3.0 s2385 (6)/k to-8 5.0 note: exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. always be sure to use the product within the absolute maximum ratings. * 1: k=borosilicate glass, l=lens type borosilicate glass * 2: photosensitive area in which a typical gain can be obtained * 3: this is a variant of the s12023-10 in which the device chip is light-shielded by aluminum layer except for the photosensitiv e area. these are 800 nm band near-infrared si apds that can operate at low voltages, 200 v or less. they are suitable for applications such as fso (free space optics) and optical range nders. fso optical range nders stable operation at low bias high-speed response high sensitivity and low noise features applications
si apd s12023 series, etc. 2 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted) type no. spectral response range peak * 4 sensitivity wavelength p photo- sensitivity s m=1 =800 nm quantum efficiency qe m=1 =800 nm breakdown voltage v br i d =100 a temp. co- efficient of v br dark* 4 current i d cutoff * 4 frequency fc r l =50 terminal * 4 capacitance ct excess * 4 noise figure x =800 nm gain m =800 nm (nm) (nm) (a/w) (%) typ. (v) max. (v) (v/c) typ. (na) max. (na) (mhz) (pf) s12023-02 400 to 1000 800 0.5 75 150 200 0.65 0.05 0.5 1000 1 0.3 100 s12023-05 0.1 1 900 2 s12051 s12086 s12023-10 0.2 2 600 6 s12023-10a * 3 s3884 0.5 5 400 10 s2384 1 10 120 40 60 s2385 330 40 95 40 * 4: values measured at a gain listed in the characteristics table note: breakdown voltage can be speci ed by using the suf x of type number as example s shown below. s12023-02-01: 80 to 120 v s12023-02-02: 120 to 160 v s12023-02-03: 160 to 200 v spectral response quantum efficiency vs. wavelength wavelength (nm) photosensitivity (a/w) (typ. ta=25 c, m at 800 nm) 200 400 600 800 1000 300 500 700 900 1100 40 20 0 60 50 30 10 m=100 m=50 wavelength (nm) quantum efficiency (%) 60 200 400 600 800 1000 300 500 700 900 1100 40 20 0 80 100 (typ. ta=25 c) kapdb0020eb kapdb0021ea
si apd s12023 series, etc. 3 gain excess noise factor 11 0 1 10 (typ. ta=25 c, f=10 khz, b=1 hz) 100 m 0.5 =650 nm m 0.3 =800 nm m 0.2 terminal capacitance vs. reverse voltage excess noise factor vs. gain kapdb0022ea reverse voltage (v) terminal capacitance 10 pf 100 pf 1 nf (typ. ta=25 c, f=1 mhz) 50 100 100 ff 1 pf 0 150 s2384 s2385 s3884 s12023-10/-10a s12023-05, s12051, s12086 s12023-02 kapdb0018ed dark current vs. reverse voltage reverse voltage (v) dark current 0 50 100 150 1 pa 100 pa 1 na 10 na (typ. ta=25 c) 10 pa s2384 s3884 s12023-05, s12051 s12086 s12023-02 s12023-10/-10a kapdb0016ed gain vs. reverse voltage 80 100 120 140 160 180 1 10 100 1000 10000 reverse voltage (v) gain (typ. =800 nm) -20 c 0 c 20 c 40 c 60 c kapdb0017ec
si apd s12023 series, etc. 4 (20) 4.7 0.2 2.6 0.2 0.45 lead photosensitive surface 5.08 0.2 case 0.4 max. 1.5 max. distance from photosensitive area center to cap center -0.3x+0.3 -0.3y+0.3 window 3.0 min. 8.2 0.1 9.1 0.2 2.54 0.2 case distance from photosensitive area center to cap center -0.2x+0.2 -0.2y+0.2 5.4 0.2 (13.5) 4.5 0.2 2.15 0.3 2.8 0.2 0.45 lead kapda0031eb kapda0011ec (3) s12086 (4) s3884 dimensional outlines (unit: mm) distance from photosensitive area center to cap center -0.2x+0.2 -0.2y+0.2 the glass window may extend a maximum of 0.2 mm above the upper surface of the cap. 0.45 lead 2.54 0.2 case photosensitive surface (13.5) 3.7 0.2 2.8 0.2 4.7 0.1 5.4 0.1 window 2.0 min. kapda0136ea (1) s12023-02/-05/-10/-10a (2) s12051 0.65 0.15 3.75 0.2 2.8 0.2 photosensitive surface (13.5) 0.45 lead 2.54 0.2 distance from photosensitive area center to cap center -0.2x+0.2 -0.2y+0.2 5.4 0.2 4.65 0.1 case kapda0018eb
si apd s12023 series, etc. 5 0.45 lead photosensitive surface 5.08 0.2 case 1.5. max. distance from photosensitive area center to cap center -0.3x+0.3 -0.3y+0.3 the glass window may extend a maximum of 0.2 mm above the upper surface of the cap. (20) 4.2 0.2 2.6 0.2 0.4 max. 8.1 0.1 9.1 0.2 window 5.9 0.1 (5) s2384 (6) s2385 kapda0012ec kapda0013ee 12.35 0.1 window 10.5 0.1 13.9 0.2 (15) 4.9 0.2 2.9 0.2 0.5 max. 7.5 0.2 0.45 lead photosensitive surface index mark 1.4 distance from photosensitive area center to cap center -0.4x+0.4 -0.4y+0.4 the glass window may extend a maximum of 0.2 mm above the upper surface of the cap. 1.0 max. case replacements for previous products previous product (listed on the previous datasheet) * replacement (listed on this datasheet) s2381 s12023-02 s2382 s12023-05 s5139 s12051 s8611 s12086 s2383 s12023-10 s2383-10 s12023-10a * products that have been removed from this datasheet
si apd s12023 series, etc. www.hamamatsu.com hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184 u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152-375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, telephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, united kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: thorshamnsgatan 35 16440 kista, sweden, telephone: (46) 8-509-031-00, fax: (46) 8- 509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 china: hamamatsu photonics (china) co., ltd.: 1201 tower b, jiaming center, no.27 dongsanhuan beilu, chaoyang district, beijing 100020, china, telephone: (86) 10-6586-6006, fax: (86) 10-6586-2866 product specifications are subject to change without prior notice due to improvements or other reasons. this document has been carefully prepared and the information contained is believed to be accurate. in rare cases, however, there may be inaccuracies such as text errors. before using these products, always contact us for the delivery specification sheet to check the latest specifications. type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(x)" which means preliminary specifications or a suffix "(z)" which means developmental specifications. the product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. however, even if within the warranty period we accept absolutely no liability for any loss caused by natural d isasters or improper product use. copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. information described in this material is current as of february, 2014. cat. no. kapd1007e12 feb. 2014 dn 6 related information precautions ? notice ? metal, ceramic, plastic package products / precautions technical information ? si apd / technical information www.hamamatsu.com/sp/ssd/doc_en.html
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